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| Transistor 2SA1310 Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SC3312 Unit: mm 4.00.2 3.00.2 0.70.1 s Features q q q q Allowing supply with the radial taping. Low noise voltage NV. High foward current transfer ratio hFE. Optimum for high-density mounting. (Ta=25C) Ratings -60 -55 -7 -200 -100 300 150 -55 ~ +150 Unit V V V mA mA mW C C 1:Emitter 2:Collector 3:Base 1.27 1.27 marking 1 2 3 +0.2 0.45-0.1 Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 2.540.15 EIAJ:SC-72 New S Type Package s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Transition frequency Noise voltage (Ta=25C) Symbol ICBO ICEO VCBO VCEO VEBO hFE* VCE(sat) VBE fT NV Conditions VCB = -10V, IE = 0 VCE = -10V, IB = 0 IC = -10A, IE = 0 IC = -2mA, IB = 0 IE = -10A, IC = 0 VCE = -5V, IC = -2mA IC = -100mA, IB = -10mA VCE = -1V, IC = -30mA VCB = -5V, IE = 2mA, f = 200MHz VCE = -10V, IC = -1mA, GV = 80dB Rg = 100k, Function = FLAT 200 150 -60 -55 -7 180 700 - 0.6 -1 V V MHz mV min typ max - 0.1 -1 Unit A A V V V *h FE Rank classification R 180 ~ 360 S 260 ~ 520 T 360 ~ 700 hFE Rank 2.00.2 s Absolute Maximum Ratings 15.60.5 1 Transistor PC -- Ta 500 -100 Ta=25C 450 -90 -100 25C Ta=75C -80 2SA1310 IC -- VCE -120 VCE=-5V IC -- VBE Collector power dissipation PC (mW) Collector current IC (mA) 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 -70 IB=-200A -60 -50 -40 -30 -20 -10 0 0 -2 -4 -6 -8 -10 -12 -180A -160A -140A -120A -100A -80A -60A -40A -20A Collector current IC (mA) 400 -80 -25C -60 -40 -20 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 IC/IB=10 600 hFE -- IC 320 VCE=-5V fT -- IE VCB=-5V Ta=25C Forward current transfer ratio hFE 500 Ta=75C 400 25C Transition frequency fT (MHz) -10 -30 -100 280 240 200 160 120 80 40 300 -25C - 0.3 25C - 0.1 Ta=75C 200 -25C 100 - 0.03 - 0.01 - 0.1 - 0.3 -1 -3 -10 -30 -100 0 - 0.1 - 0.3 -1 -3 0 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) Emitter current IE (mA) Cob -- VCB 10 120 IE=0 f=1MHz Ta=25C NV -- IC VCE=-10V GV=80dB Function=FLAT Collector output capacitance Cob (pF) 9 8 7 6 5 4 3 2 1 0 -1 100 Noise voltage NV (mV) 80 Rg=100k 60 22k 40 5k 20 -3 -10 -30 -100 0 - 0.01 - 0.03 - 0.1 - 0.3 -1 Collector to base voltage VCB (V) Collector current IC (mA) 2 |
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